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Revision 1.12
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AS5130
Datasheet - Electrical Characteristics
V
OH
High level Output voltage
VDD -
0.5
V
V
OL
Low level Output Voltage
VSS +
0.4
V
C
L
Capacitive Load
35
pF
t
slew
Slew Rate
External capacitive load C_L = 35pF
External series resistance R = 0?/DIV>
Junction temperature T
J
= 136篊
Rise time of the internal driver t_rise = 3ns
Fall time of the internal driver t_fall = 3ns
30
ns
t
delay
Time Rise Fall
15
ns
V
out_wake up
Wake up output
Open drain output with tri-state behavior
5
V
Programming Parameters
V
PROG
Programming Voltage
Static voltage at pin PROG
8.0
8.5
V
I
PROG
Programming Current
100
mA
Tamb
PROG
Programming ambient temperature
During programming
0
85
篊
t
PROG
Programming time
Timing is internally generated
2
4
祍
V
R,prog
Analog readback voltage
During Analog Readback mode at pin
PROG
0.5
V
V
R,unprog
2.2
3.5
Wake
LSB
Angle difference threshold for wake up
generation
Factory setting is 4 LSB, value is accessible
by SSI in buffered register and can be
changed by customer.
0
127
LSB
8-bit PWM output
N
PWM
PWM resolution
8
bit
PW
MIN
PWM pulse width
Angle = 0?(00
H
)
0.71
0.55
0.43
祍
PW
MAX
PWM pulse width
Angle = 358.6?(FF
H
)
182.88 142.24 108.48
祍
PW
P
PWM Period
Over full temperature range
183.6
142.8
108.9
祍
f
PWM
PWM Frequency
=1 / PWM period
5.44
7
9.18
kHz
Hyst
Digital hysteresis
At change of rotation direction
1
bit
Serial 8-bit Output
fCLK
Clock Frequency
Normal operation
6
MHz
t
CLK
166.6
ns
fCLK, P
Clock Frequency
During OTP programming
250
500
kHz
Table 3. Electrical Characteristics (Continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
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